• Part: SZA3044Z
  • Description: 1W POWER AMPLIFIER
  • Manufacturer: RF Micro Devices
  • Size: 375.30 KB
Download SZA3044Z Datasheet PDF
RF Micro Devices
SZA3044Z
Description RFMD’s SZA-3044 is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with In Ga P on Ga As device technology and fabricated with MOCVD for an ideal bination of low cost and high reliability. This product is spe- cifically designed as a final or driver stage for 802.16 equipment in the 3.3GHz to 3.8GHz bands. It can run from a 3V to 6V supply. Optimized on-chip impedance matching circuitry provides a 50 nominal RF input impedance. The external out- put match and bias adjustability allows load line optimization for other applications or over narrower bands. It features an output power detector, Optimum Technology Matching® Applied on/off power control and high RF overdrive robustness. This product is available in a Ro HS pliant and Green package Ga As HBT with matte tin finish, designated by the “Z” package suffix. Ga As MESFET - In Ga P HBT Si Ge Bi CMOS Si...