Description
(HBT) amplifier housed in a low-cost surface-mountable plastic package.
Features
- an output power detector,
Optimum Technology Matching® Applied
on/off power control and high RF overdrive robustness. This
product is available in a RoHS Compliant and Green package
GaAs HBT
with matte tin finish, designated by the “Z” package suffix. GaAs MESFET.
- InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Features.
- P1dB=31dBm at 5V.
- 802.11a 54Mb/s 2.5% EVM Per-
formance.
- POUT=24dBm, VCC=5V, 340mA,
PAE 14.5%.
- P.